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| 2SA2048K Transistor Medium power transistor (-30V, -1.0A) 2SA2048K !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1.0A) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -500mA, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K !External dimensions (Units : mm) 0.95 0.95 1.9 0.8 1.1 SMT3 0.4 (3) (1) 1.6 2.8 0.15 (1) Emitter (2) Base (3) Collector 0.3Min. !Applications Small signal low frequency amplifier High speed switching Abbreviated symbol : UL !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SA2048K Taping T146 3000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP PC Power dissipation Tj Junction temperature Range of storage temperature Tstg 1 Pw=10ms 2 Each terminal mounted on a recommended land Limits -30 -30 -6 -1.0 -2.0 200 150 -55~+150 Unit V V V A A 1 mW 2 C C (2) Each lead has same dimensions 2.9 1/3 2SA2048K Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -30 - - V IC= -100A Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100A Collector cut-off current - - -1.0 A VCB= -20V ICBO Emitter cut-off current IEBO - - -1.0 A VEB= -4V Collector-emitter saturation voltage VCE (sat) - -150 -300 mV IC= -500mA, IB= -50mA DC current gain hFE VCE= -2V, IC= -100mA 120 - 390 - Transition frequency fT - 350 - MHz VCE= -10V, IE=100mA, f=10MHz Collector output capacitance Cob - 10 - pF VCB= -10V, IE=0mA, f=1MHz Turn-on time Ton - 30 - ns IC= -1.0A IB1= -100mA Storage time Tstg - 100 - ns IB2=100mA Fall time Tf - 20 - ns VCC= -25V !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) 1000 500us -1 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE 1ms Ta=25C VCC= -25V IC/IB=10/1 1000 VCE= -2V 100 Ta=125C Ta=25C Ta=-40C 10 Tstg 100 Tf Ton -0.1 10ms 100ms DC -0.01 Single non repetitive Pulse -0.001 -0.01 -0.1 -1 -10 -100 10 -0.01 -0.1 -1 -10 1 -0.001 -0.01 -0.1 -1 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current () 1000 Ta=25C -10 IC/IB=10/1 -10 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 VCE= -5V VCE= -3V VCE= -2V -1 Ta=125C Ta=25C Ta=-40C -0.1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE -1 IC/IB=100/1 IC/IB=20/1 IC/IB=10/1 -0.1 10 1 -0.001 -0.01 -0.1 -1 -10 -0.01 -0.001 -0.01 -0.1 -1 -10 -0.01 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current () Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current () Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current () 2/3 2SA2048K Transistor IC/IB=10/1 VCE= -2V Ta=125C Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) -10 -10 COLLECTOR CURRENT : IC (A) 1000 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25C VCE= -10V -1 -1 100 Ta=-40C -0.1 Ta=25C Ta=125C -0.1 10 -0.01 -0.001 -0.01 -0.1 -1 -10 -0.01 0 -0.5 -1 -1.5 1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C f=1MHz 10 1 -0.1 -1 -10 -100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=25 VIN PW IB1 IC VCC -25V IB2 PW 50s DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% Ton Tstg Tf 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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